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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3163 DESCRIPTION With TO-220C package High breakdown voltage High speed switching PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage Collector-emitter voltage PARAMETER CONDITIONS Open emitter Open base CHA IN Collector current Base current Collector dissipation Emitter-base voltage E SEM NG TC=25ae Open collector OND IC TOR UC VALUE 500 400 7 6 2 50 150 -55~150 UNIT V V V A A W ae ae Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SC3163 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 400 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V ICEO Collector cut-off current VCE=400V ;IB=0 100 |I A ICBO Collector cut-off current VCB=500V ;IE=0 100 |I A IEBO Emitter cut-off current VEB=7V; IC=0 100 |I A hFE-1 DC current gain hFE-2 fT DC current gain IC=3A ; VCE=2V 15 CHA IN Transition frequency E SEM NG IC=6A ; VCE=2V IC=0.6A ; VCE=10V OND IC 8 TOR UC 20 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3163 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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